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 BC307B Amplifier Transistors
PNP Silicon
Features
* Pb-Free Packages are Available*
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COLLECTOR 1
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -45 -50 -5.0 -100 350 2.8 1.0 8.0 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C 1 2 BASE 3 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
3 BENT LEAD TAPE & REEL AMMO PACK
2
TO-92 CASE 29 STYLE 17
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
BC30 7BRL1 AYWW G G
A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BC307BRL1G Package TO-92 (Pb-Free) Shipping 2000 / Tape & Reel
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2007
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC307/D
1
March, 2007 - Rev. 4
BC307B
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector-Emitter Leakage Current (VCES = -50 V, VBE = 0) (VCES = -50 V, VBE = 0) TA = 125C ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -100 mAdc, VCE = -5.0 Vdc) Collector -Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) Base -Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) DYNAMIC CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) Common Base Capacitance (VCB = -10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) fT Ccbo NF - - - 280 - 2.0 - 6.0 10 MHz pF dB hFE - 200 - VCE(sat) - - - VBE(sat) - - VBE(on) -0.55 -0.7 -1.0 -0.62 - - -0.7 Vdc -0.10 -0.30 -0.25 -0.3 -0.6 - Vdc 150 290 180 - 460 - Vdc - V(BR)CEO V(BR)EBO ICES - - -0.2 -0.2 -15 -4.0 nAdc mA -45 -5.0 - - - - Vdc Vdc Symbol Min Typ Max Unit
1. IC = -10 mAdc on the constant base current characteristic, which yields the point IC = -11 mAdc, VCE = -1.0 V.
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2
BC307B
TYPICAL CHARACTERISTICS
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V
0.3
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 2. "Saturation" and "On" Voltages
400 300 C, CAPACITANCE (pF) 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) -50 VCE = -10 V TA = 25C
10 Cib 7.0 5.0 TA = 25C
3.0 Cob 2.0
f T, CURRENT-GAIN
1.0 -0.4 -0.6
-1.0
-2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS)
-20 -30 -40
Figure 3. Current-Gain -- Bandwidth Product
Figure 4. Capacitances
0.5 0.3
VCE = -10 V f = 1.0 kHz TA = 25C
r b, BASE SPREADING RESISTANCE (OHMS)
1.0 hob, OUTPUT ADMITTANCE (OHMS)
150 140
130
VCE = -10 V f = 1.0 kHz TA = 25C
0.1 0.05 0.03
120
110
0.01 -0.1
-0.2
-0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc)
-5.0
-10
100 -0.1
-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc)
-5.0
-10
Figure 5. Output Admittance
Figure 6. Base Spreading Resistance
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3
BC307B
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AM
R
A
B
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 ---
K
XX G
D J V C SECTION X-X N
1
DIM A B C D G J K N P R V
STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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4
BC307/D


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